• The drift-field transistor, also called the drift transistor or graded base transistor, is a type of high-speed bipolar junction transistor having a doping-engineered...
    2 KB (242 words) - 18:51, 13 March 2023
  • Thumbnail for Bipolar junction transistor
    unipolar transistor, such as a field-effect transistor (FET), uses only one kind of charge carrier. A bipolar transistor allows a small current injected...
    55 KB (6,795 words) - 21:00, 28 April 2024
  • Thumbnail for Alloy-junction transistor
    electric field was created in the diffused base layer to reduce the charge carrier base transit time (similar to the drift-field transistor). The post-alloy...
    8 KB (737 words) - 00:48, 21 February 2023
  • Thumbnail for Insulated-gate bipolar transistor
    An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to...
    34 KB (3,920 words) - 17:05, 9 June 2024
  • Thumbnail for Herbert Kroemer
    Bipolar Transistors IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 48, NO. 11, NOVEMBER 2001 PDF Influence of Mobility and Lifetime Variations on Drift-Field Effects...
    9 KB (682 words) - 11:55, 11 June 2024
  • collection electrode is centrally located with an external FET (field effect transistor) to convert the current into a voltage and thus represents the...
    3 KB (333 words) - 07:02, 6 March 2024
  • Thumbnail for High-electron-mobility transistor
    high-electron-mobility transistor (HEMT or HEM FET), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating...
    21 KB (2,576 words) - 16:47, 8 June 2024
  • medium is typically much faster than the drift velocity of electrons in semiconductors. Optical transistors can be directly linked to fiber-optic cables...
    17 KB (1,992 words) - 16:51, 27 March 2024
  • A carbon nanotube field-effect transistor (CNTFET) is a field-effect transistor that utilizes a single carbon nanotube (CNT) or an array of carbon nanotubes...
    36 KB (4,615 words) - 02:32, 6 April 2024
  • (metal–oxide–semiconductor field-effect transistor) by Mohamed Atalla and Dawon Kahng at Bell Labs in 1959. Generations of MOSFET transistors enabled power designers...
    31 KB (3,156 words) - 00:03, 22 February 2024
  • electric field. When an electric field E is applied across a piece of material, the electrons respond by moving with an average velocity called the drift velocity...
    51 KB (7,203 words) - 16:33, 16 May 2024
  • Thumbnail for Transistor array
    ensure a closely matching thermal drift of parameters between the transistors (which is achieved by having the transistors in extremely close proximity) The...
    3 KB (308 words) - 21:44, 12 January 2023
  • Thumbnail for Amplifier
    bipolar junction transistor (BJT) in 1948. They were followed by the invention of the metal–oxide–semiconductor field-effect transistor (MOSFET) by Mohamed...
    56 KB (7,058 words) - 21:05, 7 April 2024
  • The organic electrochemical transistor (OECT) is an organic electronic device which functions like a transistor. The current flowing through the device...
    22 KB (2,313 words) - 00:42, 19 August 2023
  • Saturation velocity (category Transistors)
    electric fields. When this happens, the semiconductor is said to be in a state of velocity saturation. Charge carriers normally move at an average drift speed...
    6 KB (779 words) - 13:05, 25 May 2024
  • Thumbnail for Klystron
    encounter an electric field which opposes their motion, and are decelerated. Beyond the buncher grids is a space called the drift space. This space is...
    26 KB (3,233 words) - 17:41, 6 June 2024
  • Thumbnail for Hall effect sensor
    influence of stray fields by a factor of 100 or better. This configuration also provides an improvement in signal-to-noise ratio and drift effects of over...
    35 KB (3,882 words) - 07:05, 31 May 2024
  • Thumbnail for OLED
    controlled sequentially, one by one, whereas AMOLED control uses a thin-film transistor (TFT) backplane to directly access and switch each individual pixel on...
    151 KB (17,045 words) - 13:04, 7 June 2024
  • Thumbnail for Multistage amplifier
    individual stages are bipolar junction transistors (BJTs) in a common emitter configuration or field-effect transistors (FETs) in a common source configuration...
    7 KB (993 words) - 12:11, 28 February 2024
  • modern semiconductor electronics: diodes, bipolar junction transistors, field-effect transistors, and variable capacitance diodes all rely on depletion region...
    17 KB (2,559 words) - 01:39, 24 March 2024
  • Thumbnail for Sensor
    include the open-gate field-effect transistor (OGFET) introduced by Johannessen in 1970, the ion-sensitive field-effect transistor (ISFET) invented by Piet...
    25 KB (3,169 words) - 06:49, 19 May 2024
  • Thumbnail for Frank Wanlass
    contribution to solving threshold voltage stability in MOS transistors due to sodium ion drift. In 1991, Wanlass was awarded the IEEE Solid-State Circuits...
    6 KB (450 words) - 14:24, 21 May 2024
  • LDMOS (category Transistor types)
    field-effect transistor) used in amplifiers, including microwave power amplifiers, RF power amplifiers and audio power amplifiers. These transistors are...
    17 KB (1,154 words) - 20:44, 31 December 2022
  • Thumbnail for Electricity
    Electricity (category Electric and magnetic fields in matter)
    electrical circuits involving active components such as vacuum tubes, transistors, diodes and integrated circuits, and associated passive interconnection...
    84 KB (9,331 words) - 07:32, 9 June 2024
  • Thumbnail for William Shockley
    and their discovery of the transistor effect". Partly as a result of Shockley's attempts to commercialize a new transistor design in the 1950s and 1960s...
    64 KB (6,816 words) - 08:29, 14 June 2024
  • Thumbnail for Strained silicon
    mobility in the transistor channel. The idea of using germanium to strain silicon for the purpose of improving field-effect transistors appears to go back...
    5 KB (595 words) - 19:47, 2 June 2023
  • This is due to a larger electric field required to generate carriers through impact. At high electric fields, drift velocity saturates due to scattering...
    24 KB (2,527 words) - 05:25, 2 May 2024
  • Thumbnail for EEPROM
    erased and reprogrammed. EEPROMs are organized as arrays of floating-gate transistors. EEPROMs can be programmed and erased in-circuit, by applying special...
    31 KB (3,110 words) - 00:49, 19 February 2024
  • Thumbnail for Memristor
    organic/nanoparticle device (the NOMFET : Nanoparticle Organic Memory Field Effect Transistor), which behaves as a memristor and which exhibits the main behavior...
    114 KB (13,866 words) - 08:01, 6 June 2024
  • Thumbnail for Photodetector
    make electron–hole pairs in the depletion region. Photodiodes and photo transistors are a few examples of photo detectors. Solar cells convert some of the...
    21 KB (2,417 words) - 10:46, 26 October 2023