Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium...
30 KB (3,798 words) - 13:55, 5 October 2024
other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. Gallium arsenide was first synthesized and studied by...
50 KB (5,544 words) - 05:18, 23 May 2025
Indium arsenide is similar in properties to gallium arsenide and is a direct bandgap material, with a bandgap of 0.35 eV at room temperature. Indium arsenide...
5 KB (284 words) - 14:27, 12 March 2025
epitaxial optoelectronic devices based other semiconductors, such as indium gallium arsenide. The devices include pseudomorphic heterojunction bipolar transistors...
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Indium gallium arsenide phosphide (GaxIn1−xAsyP1−y) is a quaternary compound semiconductor material, an alloy of gallium arsenide, gallium phosphide, indium...
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GaInAs channel. It can be also used to form alternate layers with indium gallium arsenide, which act as quantum wells; these structures are used in, e.g...
3 KB (312 words) - 23:16, 17 March 2024
Indium gallium phosphide (InGaP), also called gallium indium phosphide (GaInP), is a semiconductor composed of indium, gallium and phosphorus. It is used...
3 KB (343 words) - 21:53, 6 April 2025
metalorganic vapour-phase epitaxy of thin films of gallium arsenide, indium gallium phosphide, or indium gallium arsenide. The Mars Exploration Rovers and several...
75 KB (8,936 words) - 12:49, 26 May 2025
Indium gallium nitride (InGaN, InxGa1−xN) is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN). It is a ternary...
16 KB (1,851 words) - 18:59, 3 December 2024
(GaAsP:N). Gallium arsenide Gallium indium arsenide antimonide phosphide Gallium phosphide Indium gallium arsenide phosphide Indium gallium phosphide Tadashige...
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Gallium indium arsenide antimonide phosphide (GaInAsSbP or GaInPAsSb) is a semiconductor material. Research has shown that GaInAsSbP can be used in the...
2 KB (252 words) - 23:48, 5 October 2024
Gallium indium antimonide, also known as indium gallium antimonide, GaInSb, or InGaSb (GaxIn1-xSb), is a ternary III-V semiconductor compound. It can...
6 KB (626 words) - 04:59, 24 April 2025
development was spurred by the discovery of indium gallium arsenide and the development of the indium gallium arsenide photodiode by Pearsall. Engineers overcame...
75 KB (7,591 words) - 18:59, 23 May 2025
Indium arsenide antimonide, also known as indium antimonide arsenide or InAsSb (InAs1-xSbx), is a ternary III-V semiconductor compound. It can be considered...
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and heat capacity. It can be alloyed with gallium arsenide to produce ternary and with indium gallium arsenide to form quaternary semiconductors. BAs has...
16 KB (1,457 words) - 10:34, 28 March 2025
form binary (two elements, e.g. gallium(III) arsenide (GaAs)), ternary (three elements, e.g. indium gallium arsenide (InGaAs)) and quaternary alloys (four...
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epitaxy (MOVPE) and liquid phase epitaxy (LPE) on gallium arsenide, gallium antimonide and indium phosphide substrates. It is often incorporated into...
7 KB (750 words) - 23:47, 5 October 2024
Multi-junction solar cell (redirect from Gallium arsenide germanium solar cell)
Triple junction cells consisting of indium gallium phosphide (InGaP), gallium arsenide (GaAs) or indium gallium arsenide (InGaAs) and germanium (Ge) can be...
61 KB (8,210 words) - 16:30, 24 May 2025
rats.[medical citation needed] Indium phosphide Indium gallium phosphide Aluminium gallium phosphide Indium gallium arsenide phosphide Rodrigo, SM; Cunha...
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at much higher temperatures and work at much higher voltages than gallium arsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies...
40 KB (3,901 words) - 04:59, 26 May 2025
silicon, gallium arsenide, and indium phosphide, while silicon / silicon-germanium alloys, aluminum gallium arsenide / gallium arsenide, and indium phosphide...
6 KB (745 words) - 09:13, 29 June 2024
Forest Engineering, a company that specializes in high-performance indium gallium arsenide (InGaAs) receivers. Former Uber executive Brent Schwarz joined...
43 KB (4,176 words) - 08:13, 18 May 2025
from Dortmund University in Germany built a time crystal from indium gallium arsenide that lasted for 40 minutes, nearly 10 million times longer than...
65 KB (6,902 words) - 06:25, 23 May 2025
of quantum dots grown with this method are indium gallium arsenide (InGaAs) quantum dots in gallium arsenide (GaAs). Such quantum dots have the potential...
117 KB (13,790 words) - 04:11, 29 May 2025
in compound semiconductor processing, to etch Indium gallium arsenide selectively with respect to indium phosphide in microfabrication to etch silicon...
27 KB (2,409 words) - 18:45, 24 May 2025
telluride (Known as MCT, HgCdTe) Indium antimonide (InSb) Indium arsenide Indium gallium arsenide Lead selenide QWIP Lithium tantalate (LiTaO3) Triglycine sulfate...
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Aluminium arsenide (AlAs) is a semiconductor material with almost the same lattice constant as gallium arsenide and aluminium gallium arsenide and wider...
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radiative limit for efficiency of the GaSb cell in this setup is 52%. Indium gallium arsenide antimonide (InGaAsSb) is a compound III-V semiconductor. (InxGa1−xAsySb1−y)...
44 KB (5,760 words) - 03:18, 3 January 2025
vapors; (gas lasers) Semiconductors, e.g. gallium arsenide (GaAs), indium gallium arsenide (InGaAs), or gallium nitride (GaN). Liquids, in the form of dye...
9 KB (1,589 words) - 07:57, 3 December 2023
fabrication of small nanometer transistors. One proposed material is indium gallium arsenide, or InGaAs. Compared to their silicon and germanium counterparts...
104 KB (10,705 words) - 23:56, 28 May 2025