Indium gallium nitride (InGaN, InxGa1−xN) is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN). It is a ternary...
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into developing solar cells using the nitride based semiconductors. Using one or more alloys of indium gallium nitride (InGaN), an optical match to the solar...
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Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very...
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circuits. Semiconducting gallium nitride and indium gallium nitride produce blue and violet light-emitting diodes and diode lasers. Gallium is also used in the...
75 KB (8,936 words) - 10:23, 13 May 2025
Indium gallium phosphide (InGaP), also called gallium indium phosphide (GaInP), is a semiconductor composed of indium, gallium and phosphorus. It is used...
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Multi-junction solar cell (redirect from Gallium arsenide germanium solar cell)
[citation needed] Indium gallium nitride (InGaN) is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN). It is a ternary...
61 KB (8,206 words) - 06:42, 9 November 2024
Indium gallium aluminium nitride (InGaAlN, AlInGaN) is a GaN-based compound semiconductor. It is usually prepared by epitaxial growth methods such as metalorganic...
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semiconductor lasers based on quantum wells of gallium(III) nitride at 380-417nm or indium gallium nitride at 450 nm diode-pumped solid-state infrared lasers...
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light emission can in theory be varied from violet to amber. Aluminium gallium nitride (AlGaN) of varying Al/Ga fraction can be used to manufacture the cladding...
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Aluminium gallium indium phosphide (AlGaInP, also AlInGaP, InGaAlP, etc.) is a semiconductor material that provides a platform for the development of multi-junction...
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splitting using ansa-titanocene(III/IV) triflate complexes". An Indium gallium nitride (InxGa1-xN) photocatalyst achieved a solar-to-hydrogen efficiency...
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Gallium nitride nanotubes (GaNNTs) are nanotubes of gallium nitride. They can be grown by chemical vapour deposition (diameters of 30–250 nm). Single...
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semiconductors, being an alloy of indium nitride and aluminium nitride, and is closely related to the more widely used gallium nitride. It is of special interest...
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quaternary alloys (four elements) such as aluminium gallium indium phosphide (AlInGaP)) alloy and Indium arsenide antimonide phosphide (InAsSbP). The properties...
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Indium arsenide is similar in properties to gallium arsenide and is a direct bandgap material, with a bandgap of 0.35 eV at room temperature. Indium arsenide...
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older green LEDs (GaP has indirect band gap) Gallium nitride, Indium gallium nitride, Aluminium gallium nitride n-type: silicon (substituting Ga), germanium...
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of the band gap of the semiconductor material used; materials such as gallium arsenide, and others, with various trace doping elements, are used to produce...
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known, but only the former is commercially important. The nitrides of aluminium, gallium, and indium adopt the hexagonal wurtzite structure in which each atom...
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phosphide / indium gallium arsenide are used for the epitaxial layers. Wide-bandgap semiconductors such as gallium nitride and indium gallium nitride are especially...
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Devices incorporating more indium generally show better high-frequency performance, while in recent years, gallium nitride HEMTs have attracted attention...
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post-transition metal and one of the softest elements. Chemically, indium is similar to gallium and thallium, and its properties are largely intermediate between...
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operate in the ultraviolet using gallium nitride based semiconductors and, using the alloy aluminium gallium nitride, wavelengths as short as 250 nm have...
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epitaxial optoelectronic devices based other semiconductors, such as indium gallium arsenide. The devices include pseudomorphic heterojunction bipolar transistors...
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than it is for gallium's heavier congeners indium and thallium. For example, the very stable GaCl2 contains both gallium(I) and gallium(III) and can be...
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Following the first report of electrical injection microLEDs based on indium gallium nitride (InGaN) semiconductors in 2000 by the research group of Hongxing...
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of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. Gallium arsenide was first synthesized and studied...
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announced the development of the blue (and later green) LED based on Indium Gallium Nitride, that possibilities opened for big LED video displays. The entire...
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phononic crystal. Aluminium gallium arsenide Boron nitride Indium gallium arsenide Indium arsenide Gallium arsenide Gallium nitride Germanium Metallic hydrogen...
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oxide or indium suboxide), at 2000 °C it decomposes. It is soluble in acids but not in alkali. With ammonia at high temperature indium nitride is formed:...
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activity and toxicity of salts of inorganic group 3a metals: aluminum, gallium, indium, and thallium". Proc Natl Acad Sci USA. 68 (7): 1623–1626. Bibcode:1971PNAS...
12 KB (1,257 words) - 09:34, 28 December 2024