• Thumbnail for Insulated-gate bipolar transistor
    An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to...
    34 KB (3,702 words) - 05:43, 11 May 2025
  • two bipolar transistors with the emitter of one transistor connected to the base of the other, such that the current amplified by the first transistor is...
    9 KB (1,313 words) - 09:55, 1 April 2025
  • Thumbnail for Field-effect transistor
    (dual-gate MOSFET) or DGMOS, a MOSFET with two insulated gates. The IGBT (insulated-gate bipolar transistor) is a device for power control. It has a structure...
    52 KB (6,361 words) - 11:08, 5 May 2025
  • Thumbnail for MOSFET
    field-effect transistor (MISFET) is almost synonymous with MOSFET. Another near-synonym is insulated-gate field-effect transistor (IGFET). The main...
    98 KB (11,851 words) - 03:24, 16 May 2025
  • higher frequencies than a bipolar transistor, but is limited to low voltage applications. The Insulated-gate bipolar transistor (IGBT) was developed in...
    33 KB (3,298 words) - 18:51, 10 October 2024
  • Thumbnail for Power MOSFET
    transistor (MOSFET) designed to handle significant power levels. Compared to the other power semiconductor devices, such as an insulated-gate bipolar...
    41 KB (5,006 words) - 22:56, 30 November 2024
  • Thumbnail for Transistor
    and is preferred by some. Transistors are categorized by Structure: MOSFET (IGFET), BJT, JFET, insulated-gate bipolar transistor (IGBT), other type.[which...
    99 KB (10,298 words) - 14:50, 21 April 2025
  • Thumbnail for Bipolar junction transistor
    A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor...
    53 KB (6,544 words) - 16:52, 21 April 2025
  • inventions in history. Transistors are broadly classified into two categories: bipolar junction transistor (BJT) and field-effect transistor (FET). The principle...
    67 KB (7,592 words) - 06:08, 30 March 2025
  • Thumbnail for Multigate device
    device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has...
    40 KB (4,186 words) - 15:03, 18 November 2024
  • vacuum-channel transistor, gate-insulated planar electrodes vacuum-channel transistor, vertical vacuum-channel transistor, and all-around gate vacuum-channel...
    9 KB (1,116 words) - 12:16, 25 August 2023
  • Thumbnail for Semiconductor device
    diode Three-terminal devices: Bipolar transistor Darlington transistor Field-effect transistor Insulated-gate bipolar transistor (IGBT) Silicon-controlled...
    37 KB (5,427 words) - 18:03, 18 April 2025
  • Thumbnail for B. Jayant Baliga
    semiconductor devices, and particularly the invention of the insulated gate bipolar transistor (IGBT). In 1993, Baliga was elected as a member into the National...
    13 KB (1,097 words) - 05:19, 27 November 2024
  • Thumbnail for Gate turn-off thyristor
    by integrated gate-commutated thyristors (IGCT), which are an evolutionary development of the GTO, and insulated-gate bipolar transistors (IGBT), which...
    8 KB (1,057 words) - 08:15, 15 May 2025
  • Thumbnail for Silicon controlled rectifier
    etc. Bipolar junction transistor (BJT) Crowbar (circuit) DIAC Gate turn-off thyristor High-voltage direct current Insulated-gate bipolar transistor Integrated...
    13 KB (1,603 words) - 09:55, 1 May 2025
  • reduction: Bipolar percussion (archaeology) Bipolar junction transistor (BJT) Heterojunction bipolar transistor (HBT) Insulated-gate bipolar transistor (IGBT)...
    3 KB (391 words) - 14:23, 11 September 2024
  • contrast to bipolar transistors, MOSFETs do not require constant power input, as long as they are not being switched on or off. The isolated gate-electrode...
    6 KB (867 words) - 06:58, 3 August 2022
  • Thumbnail for Fin field-effect transistor
    field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed...
    22 KB (2,345 words) - 08:21, 26 March 2025
  • processes for making bipolar junction transistors (BJTs). Bell Labs developed the first prototype diffused junction bipolar transistors in 1954. The earliest...
    5 KB (589 words) - 03:26, 31 July 2024
  • Thumbnail for Organic field-effect transistor
    of charge carriers flowing through the system. The first insulated-gate field-effect transistor was designed and prepared by Frosch and Derrick in 1957...
    27 KB (3,369 words) - 16:30, 28 February 2025
  • Thumbnail for Programmable unijunction transistor
    the gate terminal of the PUT. This allows the designer some control over the operating point of the PUT. In construction, the programmable transistor is...
    2 KB (180 words) - 04:49, 2 June 2024
  • Thumbnail for Integrated gate-commutated thyristor
    parallel for higher power applications. Thyristor Gate turn-off thyristor Insulated-gate bipolar transistor Hingorani, Narain G; Laszlo Gyugi (2011). Understanding...
    6 KB (731 words) - 15:07, 8 May 2025
  • A unijunction transistor (UJT) is a three-lead electronic semiconductor device with only one junction. It acts exclusively as an electrically controlled...
    10 KB (1,187 words) - 16:57, 7 May 2025
  • Thumbnail for JFET
    controlled switches or resistors, or to build amplifiers. Unlike bipolar junction transistors, JFETs are exclusively voltage-controlled in that they do not...
    21 KB (2,439 words) - 19:44, 3 February 2025
  • Thumbnail for Field-programmable gate array
    Spartan FPGA from Xilinx A field-programmable gate array (FPGA) is a type of configurable integrated circuit that can be repeatedly programmed after manufacturing...
    55 KB (5,883 words) - 14:15, 21 April 2025
  • Thumbnail for OLED
    controlled sequentially, one by one, whereas AMOLED control uses a thin-film transistor (TFT) backplane to directly access and switch each individual pixel on...
    158 KB (17,769 words) - 15:03, 9 May 2025
  • Thumbnail for High-voltage direct current
    thyristors, integrated gate-commutated thyristors (IGCTs), MOS-controlled thyristors (MCTs) and insulated-gate bipolar transistors (IGBT). The first long-distance...
    78 KB (10,003 words) - 16:43, 14 May 2025
  • Thumbnail for Central processing unit
    continued to build processors out of bipolar transistortransistor logic (TTL) chips because bipolar junction transistors were faster than MOS chips up until...
    101 KB (11,424 words) - 10:57, 13 May 2025
  • self-aligned gate is a transistor manufacturing approach whereby the gate electrode of a MOSFET (metal–oxide–semiconductor field-effect transistor) is used...
    26 KB (3,762 words) - 07:38, 19 April 2024
  • Thumbnail for List of MOSFET applications
    List of MOSFET applications (category Transistor amplifiers)
    MOSFET (metal–oxide–semiconductor field-effect transistor) is a type of insulated-gate field-effect transistor (IGFET) that is fabricated by the controlled...
    174 KB (14,468 words) - 22:16, 6 March 2025