IEEE Electron Device Letters is a peer-reviewed scientific journal published monthly by the IEEE. It was founded in 1980 by IEEE Electron Devices Society...

"High-Performance fully depleted Silicon Nanowire Gate-All-Around CMOS devices". IEEE Electron Device Letters. 27 (5): 383–386. Bibcode:2006IEDL...27..383S. doi:10.1109/LED...

Low-Temperature Crystallized LPCVD Amorphous Silicon Films." IEEE Electron Device Letters 08 (1987): 361–64. Print. Zhiguo, Meng, Mingxiang Wang, and Man...

"An analytic polysilicon depletion effect model for MOSFETs". IEEE Electron Device Letters. 15 (4): 129–131. doi:10.1109/55.285407. S2CID 9878129. Rios...

M. (1983). "The COMFET—A new high conductance MOS-gated device". IEEE Electron Device Letters. 4 (3): 63–65. Bibcode:1983IEDL....4...63R. doi:10.1109/EDL...

(2001). "High Performance Si/Si1−xGex Resonant Tunneling Diodes". IEEE Electron Device Letters. 22 (4): 182. Bibcode:2001IEDL...22..182S. doi:10.1109/55.915607...

(1982). "Ultrafast deep UV Lithography with excimer lasers". IEEE Electron Device Letters. 3 (3): 53. Bibcode:1982IEDL....3...53J. doi:10.1109/EDL.1982...

IEEE Electron Device Letters, vol. 24, issue 3, pp. 138-140, 2003 "A 175 GHz HBV Frequency Quintupler With 60 mW Output Power," Bryllert et al., IEEE...

Schottky Barrier Diodes With a BV2/Ron,sp of up to 0.95 GW/cm2". IEEE Electron Device Letters. 41 (1): 107–110. doi:10.1109/LED.2019.2953559. S2CID 209696027...

multiple graded-well structure for a solid-state photomultiplier". IEEE Electron Device Letters. 8 (1): 4–6. Bibcode:1987IEDL....8....4A. doi:10.1109/EDL.1987...

Magnetics Letters, IEEE Materials for Electron Devices, IEEE Transactions on Manufacturing Technology, IEEE Transactions on Mechatronics, IEEE/ASME Transactions...

as Editor-in-Chief of the IEEE Electron Device Letters from 1999 to 2011. He was the recipient of the IEEE Electron Devices Society's J. J. Ebers Award...

Field-Effect Transistors Based on Cellulose Fiber Paper" (PDF). IEEE Electron Device Letters. 29 (9): 988–990. Bibcode:2008IEDL...29..988F. doi:10.1109/LED...

Hayes, MJ Uren, I Martin, JCH Birbeck, RS Balmer, BT Hughes, IEEE Electron Device Letters 23 (1), pp 7-9 (2002) https://doi.org/10.1109/55.974795 M Kuball...

Excited MOS-Capacitor for Recombination Lifetime Measurement". IEEE Electron Device Letters. 35 (10): 986–988. Bibcode:2014IEDL...35..986K. doi:10.1109/LED...

Velocity Overshoot in Silicon Inversion Layers, D. Sinitsky, F. Assaderaghi, C. Hu, and J. Bokor, IEEE Electron Device Letters, vol. 18, no. 2, February 1997...

latchup, IEEE Electron Device Letters, vol. EDL-6, no. 2, February, 1985. R.W. Dutton, Modeling and simulation for VLSI, International Electron Devices Meeting...

(1982). "Ultrafast deep-UV lithography with excimer lasers". IEEE Electron Device Letters. 3 (3): 53–55. Bibcode:1982IEDL....3...53J. doi:10.1109/EDL.1982...

Achieved on AlGaN/GaN HEMTs with Integrated Slant Field Plates". IEEE Electron Device Letters. 27 (9): 713. Bibcode:2006IEDL...27..713D. doi:10.1109/LED.2006...

(November 1971). "Charge-coupled imaging devices: Experimental results". IEEE Transactions on Electron Devices. 18 (11): 992–996. Bibcode:1971ITED...18...

(December 1985). "Observation of electron velocity overshoot in sub-100-nm-channel MOSFET's in Silicon". IEEE Electron Device Letters. 6 (12): 665–667. Bibcode:1985IEDL...

A single-electron transistor (SET) is a sensitive electronic device based on the Coulomb blockade effect. In this device the electrons flow through a...

Transactions on Nuclear Science (IETNAE; 1558-1578) – via CASSI "IEEE Electron Device Letters". 2022 Journal Citation Reports. Web of Science (Science ed.)....

Apple Supplier". Seeking Alpha. Retrieved 15 November 2013. IEEE Electron Device Letters, Vol. 9 Issue 1, Jan. 1988 High-quality CMOS in thin (100 nm)...

Reverse Recovery for Characterization of LDMOS Body Diode". IEEE Electron Device Letters. 35 (11): 1079. Bibcode:2014IEDL...35.1079E. doi:10.1109/LED...

2009). "On the Possibility of Tunable-Gap Bilayer Graphene FET". IEEE Electron Device Letters. 30 (3): 261–264. arXiv:0810.0128. Bibcode:2009IEDL...30..261F...

fabricated using a standard double-polysilicon CMOS process," IEEE Electron Device Letters, vol. 12, 1991, pp. 111-113 T. Shibata and T. Ohmi, "A functional...

Diamond Field-Effect Transistors With Cutoff Frequency of 53 GHz". IEEE Electron Device Letters. 33 (10): 1471–1473. Bibcode:2012IEDL...33.1471R. doi:10.1109/LED...

Organic-Based Diode–Memory Device With Rectifying Property for Crossbar Memory Array Applications". IEEE Electron Device Letters. 30 (5): 487–489. Bibcode:2009IEDL...

"Realization of a Piezophototronic Device Based on Reduced Graphene Oxide/MoS2 Heterostructure". IEEE Electron Device Letters. 37 (5): 677–680. Bibcode:2016IEDL...