Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical...
10 KB (754 words) - 16:21, 4 June 2024
Indium arsenide antimonide phosphide (InAsSbP) is a semiconductor material. InAsSbP has been used as blocking layers for semiconductor laser structures...
2 KB (187 words) - 18:56, 22 May 2024
Quantum dots can be formed in a monolayer of indium arsenide on indium phosphide or gallium arsenide. The mismatches of lattice constants of the materials...
5 KB (284 words) - 00:37, 15 May 2024
Gallium indium arsenide antimonide phosphide (GaInAsSbP or GaInPAsSb) is a semiconductor material. Research has shown that GaInAsSbP can be used in the...
2 KB (252 words) - 18:33, 3 December 2021
Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow-gap semiconductor material from...
12 KB (993 words) - 09:21, 2 May 2024
efficiency of 35.9% (claimed to be a record). Indium gallium phosphide Gallium indium arsenide antimonide phosphide Solar cell efficiency "Fraunhofer ISE achieves...
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Gallium arsenide Gallium indium arsenide antimonide phosphide Gallium phosphide Indium gallium arsenide phosphide Indium gallium phosphide Tadashige...
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(MOVPE) and liquid phase epitaxy (LPE) on gallium arsenide, gallium antimonide and indium phosphide substrates. It is often incorporated into layered...
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(four elements) such as aluminium gallium indium phosphide (AlInGaP)) alloy and Indium arsenide antimonide phosphide (InAsSbP). The properties of III-V compound...
54 KB (2,516 words) - 20:23, 15 May 2024
Aluminium arsenide Aluminium gallium arsenide Arsine Cadmium telluride Gallium antimonide Gallium arsenide phosphide Gallium manganese arsenide Gallium...
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limit for efficiency of the GaSb cell in this setup is 52%. Indium gallium arsenide antimonide (InGaAsSb) is a compound III-V semiconductor. (InxGa1−xAsySb1−y)...
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brightness since the 1960s. It is used standalone or together with gallium arsenide phosphide. Pure GaP LEDs emit green light at a wavelength of 555 nm. Nitrogen-doped...
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Boron arsenide (or Arsenic boride) is a chemical compound involving boron and arsenic, usually with a chemical formula BAs. Other boron arsenide compounds...
15 KB (1,358 words) - 17:56, 12 April 2024
vapour-phase epitaxy of thin films of gallium arsenide, indium gallium phosphide, or indium gallium arsenide. The Mars Exploration Rovers and several satellites...
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transistors, and thermophotovoltaic systems. Aluminium antimonide Indium antimonide Gallium arsenide Vurgaftman, I., Meyer, J. R., Ram-Mohan, L. R. (2001)...
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Indium nitride (InN) is a small bandgap semiconductor material which has potential application in solar cells and high speed electronics. The bandgap of...
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sulfate – In2(SO4)3 Indium antimonide – InSb Indium arsenide – InAs Indium nitride – InN Indium phosphide – InP Indium(I) iodide – InI Indium(III) nitrate –...
119 KB (8,726 words) - 04:34, 18 April 2024
Calvert, L. D.; Wang, Y. (1979). "Powder data for some new europium antimonides and bismuthides". Journal of Applied Crystallography. 12 (2): 249–251...
49 KB (3,620 words) - 04:18, 28 May 2024
suitable for Hall effect sensors: Gallium arsenide (GaAs) Indium arsenide (InAs) Indium phosphide (InP) Indium antimonide (InSb) Graphene Hall effect sensors...
35 KB (3,882 words) - 07:05, 31 May 2024
Gandhi Centre for Atomic Research Indium arsenide antimonide phosphide Indium gallium arsenide Indium gallium phosphide Indium nitride Induced gamma emission...
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silicon and compound semiconductor materials based on gallium arsenide (GaAs), indium phosphide (InP), gallium nitride (GaN) and silicon.[citation needed]...
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much higher temperatures and work at much higher voltages than gallium arsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies...
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creates the critical direct bandgap property. Gallium arsenide, indium phosphide, gallium antimonide, and gallium nitride are all examples of compound semiconductor...
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yttrium nitride, calcium phosphide, sodium arsenide, indium antimonide, and even double salts like aluminum gallium indium phosphide. These include III-V...
34 KB (4,008 words) - 21:30, 28 April 2024
also been fabricated from SiC. Various indium compounds (indium arsenide, indium antimonide, and indium phosphide) are also being used in LEDs and solid-state...
31 KB (4,826 words) - 04:22, 10 February 2024
gallium arsenide, steel and semiconductor manufacturing. Boron nitride Aluminium phosphide Aluminium arsenide Aluminium antimonide Gallium nitride Indium nitride...
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Galileo Galilei Galileo thermometer Gallium arsenide phosphide Gallium indium arsenide antimonide phosphide Galvanoluminescence Galvanometer Gamma-ray...
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semiconductor diodes made from crystals of gallium arsenide (GaAs), gallium antimonide (GaSb), and indium phosphide (InP). GaAs, GaSb, and InP are examples of...
10 KB (1,038 words) - 20:21, 11 October 2023
20661–21–6 InP indium(III) phosphide 22398–80–7 InPO4 indium(III) phosphate 14693–82–4 InS indium(II) sulfide 12030–14–7 InSb indium(III) antimonide 1312–41–0...
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first mono-crystalline indium antimonide with the highest purification 1962: Made the first mono-crystalline gallium arsenide 1963: Made the first semiconductor...
38 KB (4,595 words) - 16:12, 29 April 2024