• Thumbnail for MOSFET
    electronics, the metaloxidesemiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most...
    99 KB (11,885 words) - 01:33, 6 May 2025
  • The metalnitrideoxidesemiconductor or metalnitrideoxide–silicon (MNOS) transistor is a type of MOSFET (metaloxidesemiconductor field-effect transistor)...
    4 KB (457 words) - 03:16, 29 September 2024
  • differs from the conventional bulk metal-oxide-semiconductor field-effect transistor (MOSFET), where the semiconductor material typically is the substrate...
    29 KB (3,126 words) - 02:17, 25 December 2024
  • Thumbnail for Field-effect transistor
    used field-effect transistor is the MOSFET (metaloxidesemiconductor field-effect transistor). The concept of a field-effect transistor (FET) was first...
    52 KB (6,361 words) - 11:08, 5 May 2025
  • diodes, Schottky transistors, and metal–semiconductor field effect transistors. Whether a given metal-semiconductor junction is an ohmic contact or a Schottky...
    23 KB (2,600 words) - 01:19, 17 March 2025
  • Thumbnail for Gallium nitride
    carriers that are inherent to any semiconductor. The first gallium nitride metal semiconductor field-effect transistors (GaN MESFET) were experimentally...
    40 KB (3,877 words) - 07:51, 10 April 2025
  • Thumbnail for Transistor
    type of transistor, the metaloxidesemiconductor field-effect transistor (MOSFET), was invented at Bell Labs between 1955 and 1960. Transistors revolutionized...
    99 KB (10,298 words) - 14:50, 21 April 2025
  • Thumbnail for Semiconductor device fabrication
    fabricated a MOSFET (metaloxidesemiconductor field-effect transistor) using the silicon-on-sapphire process at RCA Laboratories. Semiconductor device manufacturing...
    110 KB (11,624 words) - 05:45, 5 May 2025
  • Thumbnail for Semiconductor device
    transistor (JFET) or by an electrode insulated from the bulk material by an oxide layer, forming a metaloxidesemiconductor field-effect transistor (MOSFET)...
    37 KB (5,377 words) - 18:03, 18 April 2025
  • Thumbnail for High-electron-mobility transistor
    demonstrated a GaN (gallium nitride) metaloxidesemiconductor HEMT (MOS-HEMT). It used atomic layer deposition (ALD) aluminum oxide (Al2O3) film both as a...
    21 KB (2,569 words) - 20:35, 3 May 2025
  • many III–V and II–VI compound semiconductors with wide bandgaps. In the III-V semiconductor family, aluminium nitride (AlN) is used to fabricate ultraviolet...
    29 KB (2,927 words) - 19:40, 14 April 2025
  • photovoltaic industry—in devices such as transistors, lasers, and solar cells—the search for new semiconductor materials and the improvement of existing...
    54 KB (2,525 words) - 09:25, 16 April 2025
  • Thumbnail for Aluminium nitride
    Aluminium nitride (AlN) is a solid nitride of aluminium. It has a high thermal conductivity of up to 321 W/(m·K) and is an electrical insulator. Its wurtzite...
    27 KB (2,391 words) - 15:01, 28 February 2025
  • dioxide (SiO2) has been used as a gate oxide material for decades. As metaloxidesemiconductor field-effect transistors (MOSFETs) have decreased in size,...
    12 KB (1,397 words) - 17:17, 4 September 2024
  • Thumbnail for Zinc oxide
    Hirano M, Hosono H (May 2003). "Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor". Science. 300 (5623): 1269–72. Bibcode:2003Sci...
    85 KB (9,287 words) - 11:04, 10 April 2025
  • Thumbnail for Integrated circuit
    modern IC chips are metaloxidesemiconductor (MOS) integrated circuits, built from MOSFETs (metaloxide–silicon field-effect transistors). The MOSFET invented...
    86 KB (9,193 words) - 03:50, 27 April 2025
  • Production". WikiChip Fuse. Retrieved April 7, 2019. "1960: Metal Oxide Semiconductor (MOS) Transistor Demonstrated". Computer History Museum. Retrieved July...
    230 KB (10,250 words) - 01:15, 2 May 2025
  • of various oxide and nitride semiconductors, which apparently seemed to confirm room temperature ferromagnetism in nearly any semiconductor or insulator...
    18 KB (2,021 words) - 19:32, 20 March 2025
  • Thumbnail for Failure of electronic components
    Failure of electronic components (category Semiconductor device defects)
    between two conductors or semiconductors; the gate oxides are thinnest and therefore most sensitive. The damaged transistor shows a low-ohmic junction...
    39 KB (4,905 words) - 21:58, 28 April 2025
  • Thumbnail for Light-emitting diode
    light-emitting diode (LED) is a semiconductor device that emits light when current flows through it. Electrons in the semiconductor recombine with electron holes...
    114 KB (12,592 words) - 16:19, 4 May 2025
  • Thumbnail for Chemical vapor deposition
    sought out in the semiconductor industry. In spite of graphene's exciting electronic and thermal properties, it is unsuitable as a transistor for future digital...
    42 KB (5,024 words) - 15:12, 30 March 2025
  • Thumbnail for Silicon
    Silicon (category Group IV semiconductors)
    published their work on the first manufactured SiO 2 semiconductor oxide transistor: the first planar transistors, in which drain and source were adjacent at the...
    88 KB (10,741 words) - 11:04, 3 May 2025
  • Thumbnail for Doping (semiconductor)
    Extrinsic semiconductor Intrinsic semiconductor List of semiconductor materials Monolayer doping p-n junction "Faraday to Shockley – Transistor History"...
    35 KB (4,525 words) - 21:27, 1 May 2025
  • Atomic layer deposition (category Semiconductor device fabrication)
    "Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing". Journal of...
    65 KB (7,440 words) - 04:51, 17 February 2025
  • Thumbnail for Hafnium(IV) oxide
    in advanced metaloxidesemiconductor devices. Hafnium-based oxides were introduced by Intel in 2007 as a replacement for silicon oxide as a gate insulator...
    9 KB (879 words) - 06:39, 28 December 2024
  • indigenous Bipolar Junction Transistor (BJT) which can function with Bi-CMOS (Bipolar Complementary Metal Oxide Semiconductor). Analogue or mixed chips...
    86 KB (9,425 words) - 01:13, 29 March 2025
  • : 121  is a cross sectional structure of MOSFET (metaloxidesemiconductor field-effect transistor), realized by P.C.Y. Chen of Fairchild Camera and...
    32 KB (3,526 words) - 17:54, 21 September 2024
  • Thumbnail for Transition metal dichalcogenide monolayers
    Transition-metal dichalcogenide (TMD or TMDC) monolayers are atomically thin semiconductors of the type MX2, with M a transition-metal atom (Mo, W, etc...
    95 KB (10,542 words) - 03:56, 18 April 2025
  • Thumbnail for Materials science
    higher frequency radar systems. Other semiconductor materials include germanium, silicon carbide, and gallium nitride and have various applications. Materials...
    64 KB (6,723 words) - 00:28, 2 May 2025
  • Thumbnail for Dynamic random-access memory
    on metaloxidesemiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In...
    92 KB (11,073 words) - 13:52, 5 April 2025