Phase-change memory (also known as PCM, PCME, PRAM, PCRAM, OUM (ovonic unified memory) and C-RAM or CRAM (chalcogenide RAM)) is a type of non-volatile...
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Non-volatile random-access memory (NVRAM) is random-access memory that retains data without applied power. This is in contrast to dynamic random-access memory (DRAM)...
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Random Access Memories is the fourth and final studio album by the French electronic music duo Daft Punk, released on 17 May 2013 through Columbia Records...
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used form of primary storage today[as of?] is a volatile form of random access memory (RAM), meaning that when the computer is shut down, anything contained...
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Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance...
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Magnetoresistive RAM (redirect from Magnetic Random Access Memory)
Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains. Developed in the mid-1980s...
47 KB (5,352 words) - 05:49, 19 April 2025
Ferroelectric RAM (redirect from Ferroelectric random-access memory)
Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric...
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Random-access memory (RAM; /ræm/) is a form of electronic computer memory that can be read and changed in any order, typically used to store working data...
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Phase change may refer to: Phase transition, the transformation from one thermodynamic state to another. Phase-change memory, a type of random-access...
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Data Rate 4 Synchronous Dynamic Random-Access Memory (DDR4 SDRAM) is a type of synchronous dynamic random-access memory with a high bandwidth ("double...
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elements in magnetic random-access memory. Spin-transfer torque magnetic random-access memory (STT-RAM or STT-MRAM) is a non-volatile memory with near-zero...
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Synchronous dynamic random-access memory (synchronous dynamic RAM or SDRAM) is any DRAM where the operation of its external pin interface is coordinated...
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Alternatively via plasma enhanced CVD there is the reaction GeH4/H2S. Phase change random access memory (PCRAM) has attracted considerable interest as a candidate...
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magnetic-core memory is a form of random-access memory. It predominated for roughly 20 years between 1955 and 1975, and is often just called core memory, or, informally...
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3D XPoint (redirect from 3D XPoint memory)
Initial prices were less than dynamic random-access memory (DRAM) but more than flash memory. As a non-volatile memory, 3D XPoint had a number of features...
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system Chalcogenide RAM, an alternative name for phase-change memory Computational RAM, random access memory with integrated processing elements CRAM (disambiguation)...
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obsolete) racetrack memory (currently experimental) ferroelectric random-access memory (FRAM) (in development and production) phase-change memory (PCM) programmable...
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Anbarasu; A. K. Sood; S. Prusty (2005). Ge-Te-Si Glasses for phase change random access memory (PC RAM) applications. International Patent application. filed...
36 KB (2,890 words) - 11:20, 7 May 2025
transformation of chalcogenides by electrical means form the basis of phase-change random-access memory (PC-RAM). This technology has been developed to near commercial...
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Card Random-Access Memory, a computer memory technology developed by NCR Chalcogenide RAM, Chalcogenide random access memory, a phase-change computer...
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memory, which consists of metal–oxide–semiconductor (MOS) memory cells. Modern random-access memory (RAM) uses MOS field-effect transistors (MOSFETs) as flip-flops...
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Electrochemical RAM (redirect from Electrochemical random-access memory)
Electrochemical Random-Access Memory (ECRAM) is a type of non-volatile memory (NVM) with multiple levels per cell (MLC) designed for deep learning analog...
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Computer data storage (redirect from Internal memory)
varying electrical resistance of the material. Phase-change memory would be non-volatile, random-access read/write storage, and might be used for primary...
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and data buses, allowing random access to any memory location. This makes it a suitable replacement for older read-only memory (ROM) chips, which are used...
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GeSbTe (section Applications in phase-change memory)
or GST) is a phase-change material from the group of chalcogenide glasses used in rewritable optical discs and phase-change memory applications. Its...
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(EEPROM) or flash memory today. Read-only memory (ROM) Read–write memory (R/W) Programmable read-only memory (PROM) Random-access memory (RAM) Neale, Ronald...
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DDR SDRAM (redirect from Double-data-rate synchronous dynamic random access memory)
Synchronous Dynamic Random-Access Memory (DDR SDRAM) is a double data rate (DDR) synchronous dynamic random-access memory (SDRAM) class of memory integrated circuits...
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Nano-RAM (category Non-volatile random-access memory)
Nano-RAM is a proprietary computer memory technology from the company Nantero. It is a type of nonvolatile random-access memory based on the position of carbon...
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Memory through Nanostructure Engineering") 2008 Tan Kah Kee Young Inventors' Silver Award ("Breaking the Limits of Phase Change Random Access Memory –...
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memory (ROM) chips, and three random logic chips. A memory card used Four-Phase's 1K random-access memory (RAM) chips. The system also included a built-in...
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