Time-dependent gate oxide breakdown (or time-dependent dielectric breakdown, TDDB) is a kind of transistor aging, a failure mechanism in MOSFETs, when...

just before failure. Thus QBD is a measure of time-dependent gate oxide breakdown. As a measure of oxide quality, QBD can also be a useful predictor of...

diagnose, and eventual failure. Charge trapping is related to time-dependent gate oxide breakdown, and manifests as an increase in resistance and threshold...

transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of...

endurance of a non-volatile memory. Time-dependent gate oxide breakdown (also time-dependent dielectric breakdown, TDDB) Electromigration (EM) Negative bias...

Land Force Time-dependent dielectric breakdown (or Time-dependent gate oxide breakdown), a failure mechanism in MOSFETs, when the gate oxide breaks down...

antifuse bit cells dependent on blowing a capacitor between crossing conductive lines. Texas Instruments developed a MOS gate oxide breakdown antifuse in 1979...

were constructed by connecting two rectifiers, such as the copper-oxide or germanium-oxide rectifier in antiparallel configuration. At low voltage the varistor...

A power MOSFET is a specific type of metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared...

sometimes to the channel dependent contact resistance. Beside the TLM it was proposed the gated four-probe measurement and the modified time-of-flight method...

Nitrous oxide (dinitrogen oxide or dinitrogen monoxide), commonly known as laughing gas, nitrous, or factitious air, among others, is a chemical compound...

efficiency. The first solid-state power semiconductor devices were copper oxide rectifiers, used in early battery chargers and power supplies for radio...

The silicon oxide substrate can be used as the gate oxide and adding a metal contact on the back makes the semiconducting CNT gateable. This technique...

metal–oxide–semiconductor (MOS) gate structure. Although the structure of the IGBT is topologically similar to a thyristor with a "MOS" gate (MOS-gate thyristor)...

junctions stressed in the same manner; it has four basic mechanisms: Oxide breakdown occurring at field strengths above 6–10 MV/cm. Junction damage manifesting...

T.; Kakushima, K.; Iwai, H. (2008-05-12). "Polarity dependent breakdown of the high-κ/SiOx gate stack: A phenomenological explanation by scanning tunneling...

APEX Expo, Las Vegas, NV, April 2011 Schuegraf and Hu, "A Model for Gate Oxide Breakdown", IEEE Trans. Electron Dev., May 1994. Takeda, E. Suzuki, N. "An...

of devices with shorter gate lengths will address higher-frequency telecom and aerospace applications. GaN-based metal–oxide–semiconductor field-effect...

re-forming or "self-healing" of the dielectric oxide layer. However, it can evaporate through a temperature-dependent drying-out process, which causes electrical...

electric devices. The voltage required to initiate and sustain discharge is dependent on the pressure and composition of the fill gas and geometry of the tube...

CCD. The gate oxide, i.e. the capacitor dielectric, is grown on top of the epitaxial layer and substrate. Later in the process, polysilicon gates are deposited...

dielectrics include glass, ceramic, plastic film, paper, mica, air, and oxide layers. When an electric potential difference (a voltage) is applied across...

changes occur throughout the pipeline at city gates, processing plants and refineries, precipitating iron oxides, iron sulfides, and sulfur from the hydrocarbon...

related species further reduced to produce the active metabolite nitric oxide (NO). Organic nitrates that undergo these two steps within the body are...

toxicity of graphene is dependent on several factors such as shape, size, purity, post-production processing steps, oxidative state, functional groups...

short time. The device does not attain its full blocking capability until the reverse current ceases. Reverse biased: For a bias between breakdown and 0...

voltage. In this period the dielectric oxide layer can self-repair weaknesses by building up new layers. The time required depends generally on the electrolyte...

increase holding time until gate freeze off (solidification time) has occurred. Gate freeze off time can be determined by increasing the hold time, and then...

Although LED forward voltage is far more current-dependent than a Zener diode, Zener diodes with breakdown voltages below 3 V are not widely available. The...

prefer higher oxidation states, but the +2 oxidation state becomes more stable for the late transition metal groups. The highest formal oxidation state thus...