band gap of a semiconductor can be of two basic types, a direct band gap or an indirect band gap. The minimal-energy state in the conduction band and...
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known as quantum confinement effect. Band gaps can be either direct or indirect, depending on the electronic band structure of the material. It was mentioned...
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Wide-bandgap semiconductor (redirect from Wide band gap semiconductor)
Boron nitride, h-BN and c-BN can form UV-LEDs. Diamond Gallium nitride Silicon carbide Silicon dioxide Direct and indirect band gaps Semiconductor device...
29 KB (2,927 words) - 19:40, 14 April 2025
temperature; its direct band gap gives it more favorable optoelectronic properties than the indirect band gap of silicon; it can be alloyed to ternary and quaternary...
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16 eV) and InAs (a = 0.606 nm, Eg = 0.42 eV). At a composition of approximately x = 0.64, the band gap transitions between direct and indirect. AlInAs...
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Zeghbroeck, B.J. "Principles of Semiconductor Devices". (for direct and indirect band gaps) Saleh, Bahaa E.A.; Teich, Malvin Carl (1991). Fundamentals...
53 KB (6,463 words) - 01:40, 11 March 2025
investigate band-gap can be sensitive to many things such as the size of the band-gap, electronic structure features (direct versus indirect gap) and also the...
9 KB (1,097 words) - 08:53, 2 April 2025
electronic band structure with direct energy gaps, where both conduction and valence band edges are located at the non-equivalent K points (K+ and K−) of...
95 KB (10,542 words) - 03:56, 18 April 2025
Alivisatos, A. Paul (2000). "Observation of pressure-induced direct-to-indirect band gap transition in InP nanocrystals". The Journal of Chemical Physics...
9 KB (1,308 words) - 17:27, 3 November 2024
energy that they may not have (called band gaps or forbidden bands). Band theory derives these bands and band gaps by examining the allowed quantum mechanical...
37 KB (4,835 words) - 02:03, 12 May 2025
measurements. The band gap could be either direct or indirect. Most studied Kondo insulators are FeSi, Ce3Bi4Pt3, SmB6, YbB12, and CeNiSn, although As...
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"Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge1−ySny alloys". Applied Physics Letters. 105 (14). AIP...
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r = 1/2 for direct allowed transitions r = 3/2 for direct forbidden transitions. r = 2 for indirect allowed transitions r = 3 for indirect forbidden transitions...
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transitions from an indirect gap, like that of pure AlSb, to a direct gap, like that of pure InSb. AlInSb has been employed as a barrier material and dislocation...
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QFET (section Structure and device operation)
"DoITPoMS - TLP Library Introduction to Semiconductors - Direct and Indirect Band Gap Semiconductors". www.doitpoms.ac.uk. Retrieved 2020-11-23. Frank...
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aluminium and antimony. The lattice constant is 0.61 nm. The indirect bandgap is approximately 1.6 eV at 300 K, whereas the direct band gap is 2.22 eV...
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string Direct-current discharge Direct and indirect band gaps Direct laser lithography Direct laser writing Direct numerical simulation Direct quantum...
17 KB (1,787 words) - 22:53, 7 October 2024
doi:10.1063/1.1368156. Adachi, S. (1987). "Band gaps and refractive indices of AlGaAsSb, GaInAsSb, and InPAsSb: Key properties for a variety of the...
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compositions, the bandgap is indirect, like it is in pure AlAs and AlSb. AlAsSb shares the same zincblende crystal structure as AlAs and AlSb. AlAsSb can be lattice-matched...
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Dental restoration (redirect from Indirect restoration)
dental implants. They are of two broad types—direct and indirect—and are further classified by location and size. Root canal therapy, for example, is a...
38 KB (4,932 words) - 09:37, 16 May 2025
zeolite-type structure. Si 24 has a quasi-direct band gap (specifically a small and almost flat indirect band gap). It can conduct electricity more efficiently...
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Sound amplification by stimulated emission of radiation (section Narrow-gap indirect semiconductors and excitons in coupled quantum wells)
only in direct gap semiconductors. The reasoning behind that is that a pair of electron and hole near minima of their bands in an indirect gap semiconductor...
55 KB (7,503 words) - 03:49, 5 March 2025
Zinc arsenide (section Synthesis and reactions)
forms gray tetragonal crystals. It is an inorganic semiconductor with a band gap of 1.0 eV. Zinc arsenide can be prepared by the reaction of zinc with arsenic...
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intermediate composition, the bandgap transitions from an indirect gap, like that of pure AlSb, to a direct gap, like that of pure GaSb. Different values of the...
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it has a direct bandgap of 0.27 eV at room temperature. (Note that incorrectly identifies PbSe and other IV–VI semiconductors as indirect gap materials...
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is caused by direct and indirect impact forces. Direct force involves an object landing on the surface on the foot. Indirect force involves twisting of...
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maintenance log records. Here, data was broken into per flight direct costs and per flight indirect costs for the top 300 global airports, with detailed footnotes...
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optical emission, because these are indirect band gap materials. The materials used for the LED have a direct band gap with energies corresponding to near-infrared...
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There are two types of lost wax methods: direct lost wax method and indirect lost wax method. The direct molding method is to make the wax material...
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electronic and optical properties that can differ from those in bulk. Bulk MoS2 has an indirect band gap of 1.2 eV, while MoS2 monolayers have a direct 1.8 eV...
44 KB (4,408 words) - 02:56, 30 January 2025