• Thumbnail for Ferroelectric RAM
    Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric...
    27 KB (3,212 words) - 00:43, 28 May 2025
  • programmable ROM) and EEPROM (electrically erasable programmable ROM), ferroelectric RAM, most types of computer data storage devices (e.g. disk storage, hard...
    18 KB (1,929 words) - 22:07, 24 May 2025
  • Thumbnail for Non-volatile random-access memory
    system to enter widespread production is ferroelectric RAM, or F-RAM (sometimes referred to as FeRAM). F-RAM is a random-access memory similar in construction...
    18 KB (2,392 words) - 15:40, 8 May 2025
  • capacitors are indeed used to make ferroelectric RAM for computers and RFID cards. In these applications thin films of ferroelectric materials are typically used...
    32 KB (4,075 words) - 02:06, 11 November 2024
  • Thumbnail for Ferroelectric capacitor
    are based on dielectric materials. Ferroelectric devices are used in digital electronics as part of ferroelectric RAM, or in analog electronics as tunable...
    3 KB (432 words) - 03:55, 10 May 2023
  • to DRAM to SRAM. An alternative memory ready for use is ferroelectric RAM (FRAM or FeRAM). FeRAM adds a small amount of a ferro-electric material to a DRAM...
    18 KB (2,419 words) - 02:45, 29 May 2025
  • Thumbnail for Microcontroller
    form of NOR flash, OTP ROM, or ferroelectric RAM is also often included on the chip, as well as a small amount of RAM. Microcontrollers are designed for...
    44 KB (5,264 words) - 02:12, 15 May 2025
  • titanate (Bi4Ti3O12) ferroelectric, or Pb1−xLnxTiO3 (PLT) and related mixed zirconate/titanates (PLZT). In the late 1980 Ferroelectric RAM was developed, using...
    6 KB (693 words) - 01:02, 26 May 2025
  • similar system to enter widespread production is ferroelectric RAM, or F-RAM (sometimes referred to as FeRAM). Also seeing renewed interest are...
    47 KB (5,352 words) - 05:49, 19 April 2025
  • necessary consequence of ferroelectricity. This can be used to store information in ferroelectric capacitors, elements of ferroelectric RAM. The most common such...
    45 KB (5,281 words) - 19:14, 13 May 2025
  • Thumbnail for Computer memory
    technologies under development include ferroelectric RAM, programmable metallization cell, Spin-transfer torque magnetic RAM, SONOS, resistive random-access...
    29 KB (3,284 words) - 22:21, 18 April 2025
  • Thumbnail for Random-access memory
    Random-access memory (RAM; /ræm/) is a form of electronic computer memory that can be read and changed in any order, typically used to store working data...
    58 KB (5,864 words) - 21:58, 31 May 2025
  • commercial product to use ferroelectric RAM (FeRAM). The Memory Card's microcontroller (MCU) contains 4 KB of embedded FeRAM manufactured by Toshiba. It...
    23 KB (2,405 words) - 05:40, 27 April 2025
  • (Ferroelectric RAM) – One type of nonvolatile RAM. Flash memory – In this type the writing process is intermediate in speed between EEPROMS and RAM memory;...
    36 KB (3,551 words) - 15:24, 11 February 2025
  • where phase-change alloy is used as a storage part of a memory cell. Ferroelectric RAM (FRAM) Magnetoresistive random-access memory (MRAM) Read-mostly memory...
    41 KB (4,693 words) - 07:06, 27 May 2025
  • Thumbnail for Magnetic-core memory
    angle Bubble memory Core dump Core rope memory Delay-line memory Ferroelectric RAM Magnetoresistive random-access memory Read-mostly memory (RMM) Thin-film...
    41 KB (5,533 words) - 02:40, 9 May 2025
  • millipede memory, Skyrmion, programmable metallization cell, ferroelectric RAM, magnetoresistive RAM, nvSRAM) In development Emerging magnetic data storage...
    99 KB (4,149 words) - 14:05, 30 May 2025
  • Fellow of the Royal Academy of Music in the University of London Ferroelectric RAM, a form of non-volatile random access memory Fleet Rehabilitation...
    3 KB (374 words) - 12:55, 13 September 2024
  • magnetoresistive random-access memory (MRAM), phase-change memory (PCRAM) and ferroelectric RAM (FeRAM). Most of these technologies offer densities similar to flash memory...
    16 KB (1,803 words) - 17:29, 21 September 2024
  • – a magnetisation that is switchable by an applied magnetic field ferroelectricity – an electric polarisation that is switchable by an applied electric...
    74 KB (8,501 words) - 17:13, 19 May 2025
  • A Ferroelectric tunnel junction (FTJ) is a form of tunnel junction including a ferroelectric dielectric material sandwiched between two electrically conducting...
    9 KB (1,199 words) - 06:42, 1 October 2024
  • Thumbnail for NvSRAM
    NvSRAM (category Types of RAM)
    Archived from the original (PDF) on 2016-08-18. "4-Mbit (256 K × 16) F-RAM Memory". Archived from the original on 2015-10-09. "StackPath". 21 March...
    9 KB (762 words) - 11:52, 1 June 2025
  • accelerometers, gyroscopes actuators, tunable optics, micro pumps, ferroelectric RAM, display systems and smart roads, when energy sources are limited...
    62 KB (7,470 words) - 21:12, 30 May 2025
  • chips that incorporate thin ferroelectric memory devices. In 1984 he co-founded Symetrix Corporation to develop ferroelectric RAM (FRAM), which licensed its...
    8 KB (525 words) - 00:31, 27 April 2025
  • of them are associated with nanotechnology, particularly a ferroelectric memory chip (FeRAM) As a professor of electrical and computer engineering at the...
    5 KB (465 words) - 04:26, 25 May 2025
  • Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance...
    53 KB (6,206 words) - 06:44, 27 May 2025
  • data in ferroelectric materials; the earliest demonstration of Ferroelectric memory, or FeRAM. This work also demonstrated that ferroelectric materials...
    12 KB (1,409 words) - 04:22, 3 April 2025
  • battery-backed random-access memory on the game cartridge. FRAM save — Ferroelectric RAM (FRAM) semiconductor memory was commercialized in the mid-1990s. Its...
    533 KB (49,410 words) - 16:09, 5 June 2025
  • Thumbnail for Content-addressable memory
    2-transistor/2-resistive-storage (2T-2R) cells. A design of TCAM using hybrid Ferroelectric FeFET was recently published by a group of International scientists...
    14 KB (1,603 words) - 21:01, 25 May 2025
  • Thumbnail for Memristor
    elucidated in an article in nature nanotechnology. The ferroelectric memristor is based on a thin ferroelectric barrier sandwiched between two metallic electrodes...
    116 KB (13,824 words) - 21:22, 2 June 2025