Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance...
53 KB (6,203 words) - 16:46, 28 February 2025
Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains. Developed in the mid-1980s...
47 KB (5,352 words) - 05:49, 19 April 2025
elements in magnetic random-access memory. Spin-transfer torque magnetic random-access memory (STT-RAM or STT-MRAM) is a non-volatile memory with near-zero...
10 KB (992 words) - 05:04, 31 July 2024
Phase-change memory (also known as PCM, PCME, PRAM, PCRAM, OUM (ovonic unified memory) and C-RAM or CRAM (chalcogenide RAM)) is a type of non-volatile random-access...
41 KB (4,693 words) - 17:13, 21 September 2024
Examples of volatile memory are dynamic random-access memory (DRAM) used for primary storage and static random-access memory (SRAM) used mainly for...
29 KB (3,284 words) - 22:21, 18 April 2025
Weebit Nano (category Computer memory companies)
develops Resistive Random-Access Memory (ReRAM or RRAM) technologies. Resistive Random-Access Memory is a specialized form of non-volatile memory (NVM) for...
29 KB (2,854 words) - 18:38, 12 March 2025
Data Rate 4 Synchronous Dynamic Random-Access Memory (DDR4 SDRAM) is a type of synchronous dynamic random-access memory with a high bandwidth ("double...
49 KB (4,577 words) - 06:47, 5 March 2025
programmable metallization cell (PMC) resistive random-access memory (RRAM) nano-RAM memristor-based memory Since each memory has its limitations, none of these...
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Crossbar (computer hardware manufacturer), a company manufacturing resistive random-access memory Crossbar (film), a 1979 Canadian television film This disambiguation...
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Crossbar, Inc. (category Computer memory companies)
Clara, California. Crossbar develops a class of non-volatile resistive random-access memory (RRAM) technology. Crossbar was founded in 2010, by George Minassian...
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3D XPoint (redirect from 3D XPoint memory)
electrical resistance and to be bit addressable. Similarities to the resistive random-access memory under development by Crossbar Inc. have been noted, but 3D XPoint...
22 KB (2,165 words) - 19:06, 20 April 2025
Memristor (redirect from Memory resistor)
aims at a real physical modeling of non-volatile memory elements, e.g., resistive random-access memory devices, one has to keep an eye on the aforementioned...
115 KB (13,731 words) - 21:39, 7 April 2025
Reading (computer) (section Random-access memory)
may read information off a floppy disk and store it temporarily in random-access memory before it is written to the hard drive to be processed at a future...
7 KB (955 words) - 16:08, 23 September 2024
Nano-RAM (category Non-volatile random-access memory)
NRAM acts as a resistive non-volatile random-access memory (RAM) and can be placed in two or more resistive modes depending on the resistive state of the...
18 KB (2,371 words) - 06:05, 15 August 2024
technology Gweng-su Rhim, developed next generation Transparent Resistive Random Access Memory (TRRAM) Seung-man Yang, developed new photonics crystal-based...
31 KB (3,167 words) - 23:40, 25 April 2025
a capacitive touchscreen. Transparent resistive random access memory Transparent resistive random access memory (TRRAM) is the world's first transparent...
165 KB (16,085 words) - 01:34, 13 April 2025
consists of metal–oxide–semiconductor (MOS) memory cells. Modern random-access memory (RAM) uses MOS field-effect transistors (MOSFETs) as flip-flops,...
28 KB (3,028 words) - 03:14, 29 September 2024
metal-oxide thin films for applications in Resistive random-access memory (RRAM), an emerging non-volatile memory storage technology. She was awarded her...
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technologies. He has been involved in developing emerging metal-oxide resistive random-access memory technologies with applications in embedded electronics. and...
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"Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures". Applied Physics Letters. 100 (12):...
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recognition unit. Unlike standard computer memory, random-access memory (RAM), in which the user supplies a memory address and the RAM returns the data word...
14 KB (1,603 words) - 21:44, 13 February 2025
Electrochemical RAM (redirect from Electrochemical random-access memory)
Electrochemical Random-Access Memory (ECRAM) is a type of non-volatile memory (NVM) with multiple levels per cell (MLC) designed for deep learning analog...
23 KB (2,494 words) - 01:05, 1 May 2025
Magnetic storage (redirect from Magnetic disk access time)
either sequential access memory or random access memory, although in some cases the distinction is not perfectly clear. The access time can be defined...
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universal memory device applicable to a wide variety of roles. Other contenders included magnetoresistive random-access memory (MRAM), phase-change memory (PCRAM)...
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Institute of Physics. His work focuses on developing metal-oxide Resistive Random-Access Memory technologies and related applications and is leading an interdisciplinary...
12 KB (1,224 words) - 12:24, 23 January 2025
Electrodes on the Switching Behavior of Strontium Titanate Nickelate Resistive Random Access Memory". Materials. 8 (10): 7191–7198. Bibcode:2015Mate....8.7191L...
35 KB (2,062 words) - 13:40, 23 February 2025
Random number generation is a process by which, often by means of a random number generator (RNG), a sequence of numbers or symbols is generated that cannot...
36 KB (4,422 words) - 19:27, 29 March 2025
substrate material. It can also be used as a dielectric in resistive random access memories. Hexagonal BN is used in xerographic process and laser printers...
77 KB (8,199 words) - 22:14, 7 May 2025
Vacuum-tube computer (section Memory technology)
vacuum tubes was the incorporation of large memories that could store thousands of bits of data and randomly access them at high speeds. That, in turn, allowed...
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"electrolytic memory". PMC is a two terminal resistive memory technology developed at Arizona State University. PMC is an electrochemical metallization memory that...
16 KB (1,891 words) - 17:26, 21 September 2024