Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of... 45 KB (5,147 words) - 15:54, 3 April 2024 |
of 37.0 °C (98.6 °F). Gallium is predominantly used in electronics. Gallium arsenide, the primary chemical compound of gallium in electronics, is used... 73 KB (8,735 words) - 06:54, 15 April 2024 |
Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and... 30 KB (3,771 words) - 14:41, 5 March 2024 |
Aluminium gallium arsenide (also gallium aluminium arsenide) (AlxGa1−xAs) is a semiconductor material with very nearly the same lattice constant as GaAs... 3 KB (295 words) - 14:40, 6 February 2022 |
Gallium arsenide phosphide (GaAs1−xPx) is a semiconductor material, an alloy of gallium arsenide and gallium phosphide. It exists in various composition... 1 KB (123 words) - 23:03, 14 October 2022 |
Solar cell (section Gallium arsenide thin film) solar cells based on monolithic, series connected, gallium indium phosphide (GaInP), gallium arsenide (GaAs), and germanium (Ge) p–n junctions, are increasing... 148 KB (16,857 words) - 17:07, 22 April 2024 |
Thin-film solar cell (section Gallium arsenide) silicon (a-Si), cadmium telluride (CdTe), copper indium gallium selenide (CIGS), or gallium arsenide (GaAs). Solar cells made with newer, less established... 127 KB (14,334 words) - 11:31, 25 April 2024 |
germanium, gallium arsenide, and elements near the so-called "metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most... 46 KB (5,377 words) - 12:24, 23 April 2024 |
Multi-junction solar cell (redirect from Gallium arsenide germanium solar cell) junction cells consisting of indium gallium phosphide (InGaP), gallium arsenide (GaAs) or indium gallium arsenide (InGaAs) and germanium (Ge) can be fabricated... 61 KB (8,207 words) - 17:49, 19 April 2024 |
crystals with a melting point of 942 °C. Indium arsenide is similar in properties to gallium arsenide and is a direct bandgap material, with a bandgap... 5 KB (284 words) - 19:46, 24 January 2024 |
limit for efficiency of the GaSb cell in this setup is 52%. Indium gallium arsenide antimonide (InGaAsSb) is a compound III-V semiconductor. (InxGa1−xAsySb1−y)... 42 KB (5,504 words) - 06:02, 24 March 2024 |
Indium gallium arsenide phosphide (GaxIn1−xAsyP1−y) is a quaternary compound semiconductor material, an alloy of gallium arsenide, gallium phosphide,... 2 KB (237 words) - 20:40, 16 January 2024 |
Gallium arsenide antimonide, also known as gallium antimonide arsenide or GaAsSb (GaAs(1-x)Sbx), is a ternary III-V semiconductor compound; x indicates... 7 KB (750 words) - 02:52, 22 January 2024 |
phononic crystal. Aluminium gallium arsenide Boron nitride Indium gallium arsenide Indium arsenide Gallium arsenide Gallium nitride Germanium Metallic... 23 KB (2,479 words) - 05:55, 15 April 2024 |
semiconductors have both advantages and disadvantages. For example, gallium arsenide (GaAs) has six times higher electron mobility than silicon, which allows... 54 KB (2,516 words) - 08:11, 19 March 2024 |
Schottky junction solar cell (section Gallium arsenide) power-conversion efficiency to 5.2%. Under the right conditions, a gallium arsenide cell can produce an efficiency of around 22%. This is considered an... 7 KB (905 words) - 15:47, 1 December 2023 |
Aluminium arsenide (AlAs) is a semiconductor material with almost the same lattice constant as gallium arsenide and aluminium gallium arsenide and wider... 8 KB (691 words) - 04:16, 21 April 2024 |
optoelectronic devices based other semiconductors, such as indium gallium arsenide. The devices include pseudomorphic heterojunction bipolar transistors... 10 KB (746 words) - 18:30, 12 January 2024 |
II, but used a photocathode made with gallium arsenide, which further improved image resolution. Gallium arsenide photocathodes are primarily manufactured... 80 KB (7,802 words) - 05:18, 7 March 2024 |
Gallium manganese arsenide, chemical formula (Ga,Mn)As is a magnetic semiconductor. It is based on the world's second most commonly used semiconductor... 34 KB (3,578 words) - 09:38, 18 March 2024 |
the band gap of the semiconductor material used; materials such as gallium arsenide, and others, with various trace doping elements, are used to produce... 32 KB (3,357 words) - 04:00, 10 March 2024 |