Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium... 30 KB (3,798 words) - 09:19, 2 May 2024 |
including indium gallium arsenide, aluminum gallium arsenide and others. In the compound, gallium has a +3 oxidation state. Gallium arsenide single crystals... 46 KB (5,183 words) - 09:13, 2 May 2024 |
Indium gallium arsenide phosphide (GaxIn1−xAsyP1−y) is a quaternary compound semiconductor material, an alloy of gallium arsenide, gallium phosphide, indium... 2 KB (237 words) - 20:40, 16 January 2024 |
gallium is in group 13 of the periodic table and is similar to the other metals of the group (aluminium, indium, and thallium). Elemental gallium is... 74 KB (8,749 words) - 06:45, 29 April 2024 |
Indium gallium nitride (InGaN, InxGa1−xN) is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN). It is a ternary... 16 KB (1,852 words) - 10:05, 26 February 2024 |
(GaAsP:N). Gallium arsenide Gallium indium arsenide antimonide phosphide Gallium phosphide Indium gallium arsenide phosphide Indium gallium phosphide Tadashige... 1 KB (128 words) - 09:14, 2 May 2024 |
radiative limit for efficiency of the GaSb cell in this setup is 52%. Indium gallium arsenide antimonide (InGaAsSb) is a compound III-V semiconductor. (InxGa1−xAsySb1−y)... 42 KB (5,504 words) - 06:02, 24 March 2024 |
Indium gallium phosphide (InGaP), also called gallium indium phosphide (GaInP), is a semiconductor composed of indium, gallium and phosphorus. It is used... 3 KB (343 words) - 06:31, 2 May 2024 |
Multi-junction solar cell (redirect from Gallium arsenide germanium solar cell) Triple junction cells consisting of indium gallium phosphide (InGaP), gallium arsenide (GaAs) or indium gallium arsenide (InGaAs) and germanium (Ge) can be... 61 KB (8,207 words) - 17:49, 19 April 2024 |
form binary (two elements, e.g. gallium(III) arsenide (GaAs)), ternary (three elements, e.g. indium gallium arsenide (InGaAs)) and quaternary alloys (four... 54 KB (2,516 words) - 08:11, 19 March 2024 |
Gallium indium arsenide antimonide phosphide (GaInAsSbP or GaInPAsSb) is a semiconductor material. Research has shown that GaInAsSbP can be used in the... 2 KB (252 words) - 18:33, 3 December 2021 |
rats.[medical citation needed] Indium phosphide Indium gallium phosphide Aluminium gallium phosphide Indium gallium arsenide phosphide Rodrigo, SM; Cunha... 7 KB (672 words) - 06:29, 2 May 2024 |
GaInAs channel. It can be also used to form alternate layers with indium gallium arsenide, which act as quantum wells; these structures are used in, e.g... 3 KB (312 words) - 23:16, 17 March 2024 |
Aluminium arsenide (AlAs) is a semiconductor material with almost the same lattice constant as gallium arsenide and aluminium gallium arsenide and wider... 8 KB (691 words) - 04:16, 21 April 2024 |
Boron group (section Gallium) of the periodic table, consisting of boron (B), aluminium (Al), gallium (Ga), indium (In), thallium (Tl) and nihonium (Nh). This group lies in the p-block... 51 KB (5,733 words) - 22:19, 3 May 2024 |
phononic crystal. Aluminium gallium arsenide Boron nitride Indium gallium arsenide Indium arsenide Gallium arsenide Gallium nitride Germanium Metallic... 23 KB (2,484 words) - 05:55, 15 April 2024 |
Gallium indium antimonide, also known as indium gallium antimonide, GaInSb, or InGaSb (GaxIn1-xSb), is a ternary III-V semiconductor compound. It can... 6 KB (626 words) - 09:17, 2 May 2024 |
silicon, gallium arsenide, and indium phosphide, while silicon / silicon-germanium alloys, aluminum gallium arsenide / gallium arsenide, and indium phosphide... 6 KB (745 words) - 14:37, 29 November 2023 |
Indium arsenide antimonide, also known as indium antimonide arsenide or InAsSb (InAs1-xSbx), is a ternary III-V semiconductor compound. It can be considered... 6 KB (693 words) - 10:46, 7 February 2024 |
of quantum dots grown with this method are indium gallium arsenide (InGaAs) quantum dots in gallium arsenide (GaAs). Such quantum dots have the potential... 113 KB (13,191 words) - 21:44, 1 May 2024 |
Arsenide nitrides or nitride arsenides are compounds containing anions composed of nitride (N3−) and arsenide (As3−). They can be considered as mixed... 10 KB (825 words) - 15:19, 8 November 2023 |
epitaxy (MOVPE) and liquid phase epitaxy (LPE) on gallium arsenide, gallium antimonide and indium phosphide substrates. It is often incorporated into... 7 KB (750 words) - 02:52, 22 January 2024 |