 | Mohamed M. Atalla (Arabic: محمد عطاالله; August 4, 1924 – December 30, 2009) was an Egyptian-American engineer, physicist, cryptographer, inventor and... 51 KB (4,847 words) - 18:34, 21 April 2024 |
1972, initially as Atalla Technovation, before it was later called Atalla Corporation. The company was founded by Dr. Mohamed M. Atalla, the inventor of... 19 KB (1,739 words) - 18:33, 21 April 2024 |
Atalla may refer to: Mohamed M. Atalla, Egyptian-American semiconductor and cybersecurity pioneer, also known by the alias "John" or "Martin" M. Atalla... 535 bytes (93 words) - 07:28, 20 April 2021 |
increase in bandwidth. The MOSFET (MOS transistor) was invented by Mohamed M. Atalla and Dawon Kahng at Bell Labs in 1959, and went on to become the basic... 13 KB (1,248 words) - 16:44, 25 April 2024 |
 | Schawlow and Charles Hard Townes first described the laser. In 1959, Mohamed M. Atalla and Dawon Kahng invented the metal-oxide semiconductor field-effect... 151 KB (12,787 words) - 10:51, 10 May 2024 |
Abouleish Kamal el-Mallakh Labib Habachi Magdi Yacoub Mahmoud Samir Fayed Mohamed M. Atalla Mostafa Kamal Tolba Rana el Kaliouby Rushdi Said Sameera Moussa Samir... 987 bytes (75 words) - 22:35, 14 December 2023 |
 | car radio-telephone service opens in Liverpool and Manchester 1959: Mohamed M. Atalla and Dawon Kahng at Bell Telephone Laboratories invent the metal–oxide–semiconductor... 39 KB (4,595 words) - 15:29, 2 May 2024 |
wide adoption of PCM digital telephony. The MOSFET was invented by Mohamed M. Atalla and Dawon Kahng at Bell Telephone Laboratories in 1959, and the... 23 KB (2,823 words) - 18:53, 20 March 2024 |
 | Jean Hoerni in early 1959. In turn, the planar process was based on Mohamed M. Atalla's work on semiconductor surface passivation by silicon dioxide in the... 138 KB (13,933 words) - 02:20, 4 May 2024 |
Queen's Birthday Honours. Mohamed M. Atalla invented the first PIN-based hardware security module (HSM), dubbed the "Atalla Box," a security system that... 24 KB (2,811 words) - 19:26, 5 May 2024 |
 | junction isolation by Kurt Lehovec. Hoerni's invention was built on Mohamed M. Atalla's work on surface passivation, as well as Fuller and Ditzenberger's... 81 KB (8,770 words) - 21:56, 1 May 2024 |
language Wireless revolution Pioneers Nasir Ahmed Edwin Howard Armstrong Mohamed M. Atalla John Logie Baird Paul Baran John Bardeen Alexander Graham Bell Emile... 14 KB (1,478 words) - 18:56, 4 April 2024 |
 | language Wireless revolution Pioneers Nasir Ahmed Edwin Howard Armstrong Mohamed M. Atalla John Logie Baird Paul Baran John Bardeen Alexander Graham Bell Emile... 92 KB (9,181 words) - 16:27, 6 May 2024 |
 | except that the letter O was allocated to the digit 0 (zero); digit 6 had only M and N. The letter Q was later added to the zero position on British dials... 27 KB (3,414 words) - 17:59, 30 January 2024 |
 | language Wireless revolution Pioneers Nasir Ahmed Edwin Howard Armstrong Mohamed M. Atalla John Logie Baird Paul Baran John Bardeen Alexander Graham Bell Emile... 7 KB (54 words) - 04:10, 14 November 2023 |
invented by Mohamed M. Atalla and Dawon Kahng at Bell Labs in 1959, and presented in 1960. RCA Laboratories researchers W.M. Austin, J.A. Dean, D.M. Griswold... 45 KB (4,781 words) - 17:15, 4 April 2024 |
language Wireless revolution Pioneers Nasir Ahmed Edwin Howard Armstrong Mohamed M. Atalla John Logie Baird Paul Baran John Bardeen Alexander Graham Bell Emile... 5 KB (472 words) - 16:00, 23 April 2024 |
 | the forms of PMOS and NMOS were demonstrated by Bell Labs engineers Mohamed M. Atalla and Dawon Kahng in 1960. Both types were later combined and adapted... 39 KB (3,459 words) - 20:04, 6 May 2024 |
language Wireless revolution Pioneers Nasir Ahmed Edwin Howard Armstrong Mohamed M. Atalla John Logie Baird Paul Baran John Bardeen Alexander Graham Bell Emile... 27 KB (522 words) - 19:42, 16 April 2024 |
 | Packard Directors Marc Andreessen Mohamed M. Atalla Shumeet Banerji Raj Gupta Raymond J. Lane Ann Livermore Gary M. Reiner Patricia F. Russo (Chairwoman)... 32 KB (2,771 words) - 20:38, 6 May 2024 |
Sze, Simon M. (2002). Semiconductor Devices: Physics and Technology (PDF) (2nd ed.). Wiley. p. 4. ISBN 0-471-33372-7. Atalla, Mohamed M.; Kahng, Dawon... 75 KB (5,940 words) - 04:01, 3 April 2024 |
 | language Wireless revolution Pioneers Nasir Ahmed Edwin Howard Armstrong Mohamed M. Atalla John Logie Baird Paul Baran John Bardeen Alexander Graham Bell Emile... 12 KB (1,125 words) - 13:29, 31 January 2024 |
 | Maximum power output from a Bluetooth radio is 100 mW for Class 1, 2.5 mW for Class 2, and 1 mW for Class 3 devices. Even the maximum power output of... 133 KB (13,906 words) - 05:23, 10 May 2024 |
language Wireless revolution Pioneers Nasir Ahmed Edwin Howard Armstrong Mohamed M. Atalla John Logie Baird Paul Baran John Bardeen Alexander Graham Bell Emile... 7 KB (52 words) - 04:07, 14 November 2023 |
 | Random-access memory (redirect from R.A.M.) field-effect transistor), also known as the MOS transistor, by Mohamed M. Atalla and Dawon Kahng at Bell Labs in 1959, led to the development of... 57 KB (5,731 words) - 15:02, 30 April 2024 |
| language Wireless revolution Pioneers Nasir Ahmed Edwin Howard Armstrong Mohamed M. Atalla John Logie Baird Paul Baran John Bardeen Alexander Graham Bell Emile... 6 KB (92 words) - 09:00, 7 January 2024 |
language Wireless revolution Pioneers Nasir Ahmed Edwin Howard Armstrong Mohamed M. Atalla John Logie Baird Paul Baran John Bardeen Alexander Graham Bell Emile... 10 KB (1,048 words) - 14:51, 26 April 2024 |
 | the time. A breakthrough came with the work of Egyptian engineer Mohamed M. Atalla in the late 1950s. He developed the method of surface passivation... 8 KB (843 words) - 14:02, 14 February 2024 |
 | Packard Directors Marc Andreessen Mohamed M. Atalla Shumeet Banerji Raj Gupta Raymond J. Lane Ann Livermore Gary M. Reiner Patricia F. Russo (Chairwoman)... 38 KB (2,731 words) - 10:45, 1 May 2024 |
 | the metal–oxide–semiconductor field-effect transistor (MOSFET) by Mohamed M. Atalla and Dawon Kahng at Bell Labs. MOSFET scaling, the miniaturisation... 15 KB (1,789 words) - 08:45, 2 March 2024 |