Avalanche photodetectors require a special structure to reduce reverse leakage current due to tunnelling. The first practical avalanche photodiodes were... 30 KB (3,771 words) - 14:41, 5 March 2024 |
 | at around 1–20 mA Ipk, and so should be protected against overcurrent. Avalanche diode Gunn diode IMPATT diode Lambda diode Resonant-tunneling diode Tunnel... 14 KB (1,472 words) - 06:23, 17 April 2024 |
 | Transistor (section Transistor as a switch) RF circuits Schottky transistor avalanche transistor Darlington transistors are two BJTs connected together to provide a high current gain equal to the... 94 KB (9,852 words) - 07:11, 17 April 2024 |
 | 62 à 63 (in French). 1973. Safir, Ruben (March 2015). "System on Chip – Integrated Circuits". NYLXS Journal. ISBN 9781312995512. Mindell, David A. (2008)... 81 KB (8,766 words) - 17:00, 1 April 2024 |
 | important for transistors below 130 nm technology with gate oxides of 20 Å or thinner. Small reverse leakage currents are formed due to formation of... 54 KB (6,223 words) - 00:55, 22 March 2024 |
volume 3 of A History of Engineering and Science in the Bell System. FR 1010427 H. F. Mataré/H. Welker/Westinghouse: "Nouveau système cristallin à plusieurs... 64 KB (7,310 words) - 05:16, 15 April 2024 |
 | layer, followed by a SeAsTe layer, a SeAs layer, and an Antimony trisulfide layer which faces the electron beam. A high-gain avalanche rushing amorphous... 108 KB (12,433 words) - 15:46, 20 March 2024 |
 | center of the pyramidal tip. Standard optical detectors, such as avalanche photodiode, photomultiplier tube (PMT) or CCD, can be used. Highly specialized... 23 KB (2,841 words) - 00:14, 5 December 2023 |
 | directly attaching leads to the crystal. E.g. the BVA resonator (Boîtier à Vieillissement Amélioré, Enclosure with Improved Aging),[unreliable source... 89 KB (9,470 words) - 07:05, 17 March 2024 |